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參數(shù)資料
| 型號(hào)： | APTM100A23SCTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | APTM100A23SCTG |
APTM100A23SCTG
A
P
T
M
100A
23S
C
T
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
3 - 7
Parallel SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
200
800
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 150°C
400
4000
A
IF
DC Forward Current
Tc = 125°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2.6
3.0
V
QC
Total Capacitive Charge
IF = 20A, VR = 600V
di/dt =1200A/s
56
nC
f = 1MHz, VR = 200V
180
Q
Total Capacitance
f = 1MHz, VR = 400V
132
pF
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.18
Series diode
0.65
RthJC
Junction to Case Thermal Resistance
Parallel diode
0.8
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
2.5
4.7
N.m
Wt
Package Weight
160
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
B 25/85
T25 = 298.15 K
3952
K
=
T
B
R
T
1
exp
25
85
/
25
SP4 Package outline (dimensions in mm)
ALL D IMENSION S MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM100A23SCT | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23SCT | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23STG | 36 A, 1000 V, 0.27 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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