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參數(shù)資料
| 型號： | APTM100A23SCTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 295K |
| 代理商： | APTM100A23SCTG |
APTM100A23SCTG
A
P
T
M
100A
23S
C
T
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
6 - 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
10
20
30
40
50
60
70
80
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=667V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
10
20
30
40
50
60
70
80
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=667V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
E
off
0
0.5
1
1.5
2
2.5
10
20
30
40
50
60
70
80
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=667V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
0
3
5
8
10
13
15
Gate Resistance (Ohms)
S
w
it
c
h
in
g
E
n
e
rg
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=667V
ID=36A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
14
18
22
26
30
34
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=2.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM100A23SCT | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23SCT | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23STG | 36 A, 1000 V, 0.27 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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