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參數(shù)資料
| 型號(hào)： | APTM100DA18T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 312K |
| 代理商： | APTM100DA18T |
APTM100DA18T
AP
T
M
10
0DA1
8T
–R
ev
1
J
une
,2005
APT website – http://www.advancedpower.com
3 – 6
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.16
RthJC
Junction to Case
Diode
0.9
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
1.5
4.7
N.m
Wt
Package Weight
160
g
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
B 25/85
T25 = 298.15 K
3952
K
=
T
B
R
T
1
exp
25
85
/
25
Package outline (dimensions in mm)
T: Thermistor temperature
RT: Thermistor value at T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100DA18T1G | 功能描述:MOSFET N-CH 1000V 40A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100DA18TG | 功能描述:MOSFET N-CH 1000V 43A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100DA33T1G | 功能描述:MOSFET N-CH 1000V 23A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100DA40T1G | 功能描述:MOSFET N-CH 1000V 20A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100DAM90 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
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