- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36739 > APTM100DA18T (MICROSEMI POWER PRODUCTS GROUP) 43 A, 1000 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM100DA18T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 312K |
| 代理商： | APTM100DA18T |
APTM100DA18T
AP
T
M
10
0DA1
8T
–R
ev
1
J
une
,2005
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
40
80
120
160
200
10
30
50
70
90
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=670V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
10
30
50
70
90
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=670V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
10
30
50
70
90
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(m
J)
VDS=670V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
6
7
0
5
10
15
20
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=670V
ID=43A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
15
20
25
30
35
40
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=2.5
TJ=125°C
Tc=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM100DA33T1G | 23 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DA40T1G | 20 A, 1000 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DAM90 | 78 A, 1000 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DAM90 | 78 A, 1000 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DDA35T3 | 22 A, 1000 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100DA18T1G | 功能描述:MOSFET N-CH 1000V 40A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA18TG | 功能描述:MOSFET N-CH 1000V 43A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA33T1G | 功能描述:MOSFET N-CH 1000V 23A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA40T1G | 功能描述:MOSFET N-CH 1000V 20A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DAM90 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。