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參數(shù)資料
| 型號(hào)： | APTM100DSK35T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 320K |
| 代理商： | APTM100DSK35T3 |
APTM100DSK35T3
A
P
T
M
100D
SK
35T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
1 – 6
14
13
Q1
Q2
11
18
22
7
31
29
CR2
16
R1
19
10
23
32
CR1
15
8
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
22
ID
Continuous Drain Current
Tc = 80°C
17
IDM
Pulsed Drain current
88
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
350
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 350m max @ Tj = 25°C
ID = 22A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
Dual Buck chopper
MOSFET Power Module
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| APTM100H35FT | 22 A, 1000 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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