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參數(shù)資料
| 型號(hào)： | APTM100H35FT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 315K |
| 代理商： | APTM100H35FT |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
600
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.0A
-
5
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.0A
-
1.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=600V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
±1
uA
Qg
Total Gate Charge
3
ID=2A
-
12
19
nC
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5.5
-
nC
td(on)
Turn-on Delay Time
3
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
52
-
ns
tf
Fall Time
RD=200Ω
-19
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=10V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=2A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=2A, VGS=0V,
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
2.2
-
C
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj
oC , V
DD=50V , L=10mH , RG=25Ω
3.Pulse test
2/4
AP4002S/P
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
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| APTM100H35FT3 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
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| APTM100H35FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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