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參數(shù)資料
| 型號(hào)： | APTM100H35FT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 315K |
| 代理商： | APTM100H35FT |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP4002S/P
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =1.0A
V G =10V
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
0.4
0.8
1.2
1.6
2
024
6
8
10
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
V G =4.5V
10V
7.0V
6.0V
5.0V
0
0.4
0.8
1.2
1.6
2
010
20
30
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
V G =4.0V
10V
7.0V
6.0V
5.0V
0
2
4
6
8
10
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j = 25
o C
T j = 150
o C
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100H35FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM100H35FT3G | 功能描述:MOSFET MODULE FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100H35FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100H40FT3G | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM100H45FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
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