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參數(shù)資料
| 型號(hào)： | APTM100UM65SCAVG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 266K |
| 代理商： | APTM100UM65SCAVG |
APTM100UM65SCAVG
APTM100UM65S
CAVG
–
Rev
0
Septem
ber,
2009
www.microsemi.com
6 – 8
0.90
0.95
1.00
1.05
1.10
1.15
25
50
75
100
125
150
TJ, Junction Temperature (°C)
BV
DS
S
,Drai
n
to
S
o
u
rce
B
reakd
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
z
ed
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
Drai
n
to
So
u
rce
ON
resi
stance
(N
or
m
a
lize
d
)
VGS=10V
ID=72.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
25
50
75
100
125
150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thre
s
hold
Vo
lt
a
g
e
(N
or
m
a
lize
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
100
1000
10000
100000
0
1020
3040
50
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
VDS=200V
VDS=500V
VDS=800V
0
2
4
6
8
10
12
14
0
300
600
900
1200
1500
Gate Charge (nC)
V
GS
,Gate
to
S
o
u
rce
Vo
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=145A
TJ=25°C
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