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參數(shù)資料
| 型號： | APTM10DSKM19T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 100 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 315K |
| 代理商： | APTM10DSKM19T3 |
APTM10DSKM19T3
A
P
T
M
10D
SK
M
19T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
6 - 6
Delay Times vs Current
td(on)
t
d(off)
0
20
40
60
80
100
120
0
204060
80
100
120
I
D, Drain Current (A)
t d(
on)
a
nd
t
d(
o
ff
)(n
s)
VDS=66V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0
2040
6080
100
120
I
D, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=66V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
E
off
0
0.25
0.5
0.75
0
204060
80
100
120
ID, Drain Current (A)
E
on
an
d
E
of
f(m
J)
VDS=66V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
0
1020
3040
5060
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J)
Switching Energy vs Gate Resistance
VDS=66V
ID=70A
TJ=125°C
L=100H
Hard
switching
ZVS
ZCS
0
50
100
150
200
250
300
13
25
38
50
63
75
I
D, Drain Current (A)
F
re
que
nc
y(
k
H
z)
Operating Frequency vs Drain Current
VDS=66V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.30.5
0.70.9
1.11.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
e
Dra
in
Cu
rre
n
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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| APTM10DSKM19T3 | 70 A, 100 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM10DUM05T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
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