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參數(shù)資料
| 型號： | APTM10DUM05T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 308K |
| 代理商： | APTM10DUM05T |
APTM10DUM05T
A
P
T
M
10D
U
M
05T
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 6
S
Q1
Q2
D2
S2
S1
G1
G2
D1
NTC1
NTC2
S2
G2
NTC2
OUT
VBUS
NTC1
S1
S2
G2
0/VBUS
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
278
ID
Continuous Drain Current
Tc = 80°C
207
IDM
Pulsed Drain current
1100
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
5
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 4.5m typ @ Tj = 25°C
ID = 278A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Dual common source
MOSFET Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM10DUM05T | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM05F | 278 A, 100 V, 0.005 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM05F | 278 A, 100 V, 0.005 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM09FT3 | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM09FT3 | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM10DUM05TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM10DUM05TG_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual common source MOSFET Power Module |
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| APTM10HM05FG | 功能描述:MOSFET MOD FULL BRIDGE 100V SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM10HM09FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
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