- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36740 > APTM10DUM05T (MICROSEMI POWER PRODUCTS GROUP) 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM10DUM05T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 308K |
| 代理商： | APTM10DUM05T |
APTM10DUM05T
A
P
T
M
10D
U
M
05T
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 125A
4.5
5
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
20
Coss
Output Capacitance
8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
2.9
nF
Qg
Total gate Charge
700
Qgs
Gate – Source Charge
120
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 250A
360
nC
Td(on)
Turn-on Delay Time
80
Tr
Rise Time
165
Td(off)
Turn-off Delay Time
280
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 66V
ID = 250A
RG = 2.5
135
ns
Eon
Turn-on Switching Energy
1.1
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, RG =2.5
1.2
mJ
Eon
Turn-on Switching Energy
1.22
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, RG = 2.5
1.28
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
278
IS
Continuous Source current
(Body diode)
Tc = 80°C
207
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 250A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
trr
Reverse Recovery Time
Tj = 25°C
270
ns
Qrr
Reverse Recovery Charge
IS = - 250A
VR = 50V
diS/dt = 200A/s
Tj = 25°C
5.8
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 278A
di/dt
≤ 200A/s
VR ≤ VDSS
Tj ≤ 150°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM10DUM05T | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM05F | 278 A, 100 V, 0.005 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM05F | 278 A, 100 V, 0.005 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM09FT3 | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM09FT3 | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM10DUM05TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM10DUM05TG_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual common source MOSFET Power Module |
| APTM10HM05F | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM10HM05FG | 功能描述:MOSFET MOD FULL BRIDGE 100V SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM10HM09FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。