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參數(shù)資料
| 型號： | APTM120H57FT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 315K |
| 代理商： | APTM120H57FT |
APTM120H57FT
A
P
T
M
120H
57F
T
–
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 8.5A
570
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5155
Coss
Output Capacitance
770
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
130
pF
Qg
Total gate Charge
187
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 17A
120
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
160
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 17A
RG = 5
45
ns
Eon
Turn-on Switching Energy
990
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5
685
J
Eon
Turn-on Switching Energy
1565
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5
857
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
17
IS
Continuous Source current
(Body diode)
Tc = 80°C
13
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 17A
1.3
V
dv/dt
Peak Diode Recovery
18
V/ns
Tj = 25°C
320
trr
Reverse Recovery Time
IS = - 17A
VR = 600V
diS/dt = 100A/s
Tj = 125°C
650
ns
Tj = 25°C
2
Qrr
Reverse Recovery Charge
IS = - 17A
VR = 600V
diS/dt = 100A/s
Tj = 125°C
7
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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| APTM120H57FT | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM120TA57FP | 17 A, 1200 V, 0.57 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120TA57FP | 17 A, 1200 V, 0.57 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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