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參數(shù)資料
| 型號(hào)： | APTM120H57FT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 315K |
| 代理商： | APTM120H57FT |
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
4/7
AP4513GH-A
0
10
20
30
012345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
10
20
30
012345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
20
30
40
50
60
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON0
(m
Ω
)
I D =5A
T C =25
o C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =7A
V G =10V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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