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參數(shù)資料
| 型號(hào)： | APTM120UM70D-A1N |
| 元件分類： | JFETs |
| 英文描述： | 171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 299K |
| 代理商： | APTM120UM70D-A1N |
APTM120UM70D-AlN
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J
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2004
APT website – http://www.advancedpower.com
1 – 6
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
171
ID
Continuous Drain Current
Tc = 80°C
126
IDM
Pulsed Drain current
684
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
70
m
PD
Maximum Power Dissipation
Tc = 25°C
5000
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ
VDSS = 1200V
RDSon = 70m max @ Tj = 25°C
ID = 171A @ Tc = 25°C
Application
Zero Current Switching resonant mode
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
with Series diodes
MOSFET Power Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120UM70DAG | 功能描述:MOSFET N-CH 1200V 171A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120UM70D-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120UM70FA | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM120UM70FAG | 功能描述:MOSFET N-CH 1200V 171A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120UM70F-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch MOSFET Power Module |
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