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參數(shù)資料
| 型號(hào)： | APTM50H15UT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 143K |
| 代理商： | APTM50H15UT1G |
APTM50H15UT1G
APT
M
50H15UT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 21A
150
180
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5448
Coss
Output Capacitance
735
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
72
pF
Qg
Total gate Charge
170
Qgs
Gate – Source Charge
38
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 21A
80
nC
Td(on)
Turn-on Delay Time
29
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
80
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 21A
RG = 4.7Ω
26
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
25
IS
Continuous Source current
(Body diode)
Tc = 80°C
19
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 21A
1
V
dv/dt
Peak Diode Recovery
30
V/ns
Tj = 25°C
215
trr
Reverse Recovery Time
Tj = 125°C
370
ns
Tj = 25°C
0.90
Qrr
Reverse Recovery Charge
IS = - 21A
VR = 100V
diS/dt = 100A/s
Tj = 125°C
2.6
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 21A
di/dt
≤ 1000A/s
VDD ≤ 333V
Tj ≤ 125°C
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