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參數(shù)資料
| 型號(hào)： | APTM60A11FT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 600 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-12 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 139K |
| 代理商： | APTM60A11FT1G |
APTM60A11FT1G
APT
M
60A11FT
1
G
–
Rev
0
Februar
y
,2010
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 33A
90
110
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
10552
Coss
Output Capacitance
1210
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
330
Qgs
Gate – Source Charge
70
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 33A
140
nC
Td(on)
Turn-on Delay Time
75
Tr
Rise Time
85
Td(off)
Turn-off Delay Time
225
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 400V
ID = 33A
RG = 2.2Ω
70
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
40
IS
Continuous Source current
(Body diode)
Tc = 80°C
30
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 33A
1
V
dv/dt
Peak Diode Recovery
30
V/ns
Tj = 25°C
250
trr
Reverse Recovery Time
Tj = 125°C
460
ns
Tj = 25°C
1.27
Qrr
Reverse Recovery Charge
IS = - 33A
VR = 100V
diS/dt = 100A/s
Tj = 125°C
3.32
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 33A
di/dt
≤ 1000A/s
VDD ≤ 400V
Tj ≤ 125°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM60A11UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTM60A23FT1G | 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM60A23UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTM60H23FT1G | 功能描述:MOSFET MODULE FULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM60H23UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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