參數(shù)資料
型號(hào): ARF444
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
中文描述: N溝道增強(qiáng)型射頻功率MOSFET
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 64K
代理商: ARF444
0
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 300V
f = 1 MHz
MIN
TYP
MAX
1500
1800
90
130
28
50
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
ψ
MIN
TYP
MAX
17
18.7
83
UNIT
dB
%
Test Conditions
V
DD
= 300V
V
GS
= 0V
P
out
= 300W
f = 13.56MHz
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 30:1
ARF444/445
1
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL 13.56 MHz, 1000 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT
Parts List
R1-R16 = 4.7
1W
C2-C6 = 0.1
μ
F Disk Ceramic
Q1, Q3 = ARF444
L1, L2 = 0.37
μ
H: 6T, #18AWG, ID=0.438
RFC1 = 2T, #14 PTFE coated twisted pair on a Fair-Rite #2643665702 shield bead,
μ
i=850
T1 = 9:1 (Z) conventional transformer; 3:1 (T), #18 stranded PTFE coated wire on two Fair-Rite #2643540002,
μ
i=850
T2 = 1:1 (Z) conventional transformer; 2:2 (T), #14 stranded PTFE coated wire on two stacks of three
Fair-Rite #2643102002 shielded bead,
μ
i=850
BFC1 = 6T, #18 Twisted pair stranded PTFE coated wire on three stacked Indiana General Toroid #F624-19-Q1
μ
i=125
C1 = 200pF Chip Capacitor
C7, C8 = 0.01 Disk Ceramic
Q2, Q4 = ARF445
L2
L1
RFC1
J1
RF INPUT
J2
RF OUTPUT
J3
300VDC
Q1
T1
BFC1
T2
C1
C6
C7
Q2
Q3
Q4
C2
C3
C4
C5
R1-R4
R5-R8
R9-R12
R13-R16
C8
Circuit Characteristics
P
out
= 1000W
Gain = 16.5dB
Efficiency = 80%
相關(guān)PDF資料
PDF描述
ARF445 N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
ARF446 N-CHANNEL ENHANCEMENT MODE
ARF447 N-CHANNEL ENHANCEMENT MODE
ARF448 N-CHANNEL ENHANCEMENT MODE
ARF448A ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ARF444G 制造商:Microsemi Corporation 功能描述:ARF444 Series N-Channel 300 W 15 MHz Flange Mount RF Power Mosfet - TO-247-3
ARF445 制造商:Microsemi Corporation 功能描述:PWR MOSFET RF N-CH 900V TO-247AD
ARF446 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE
ARF446_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE
ARF446G 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 900V 6.5A TO247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET