參數(shù)資料
型號: ARF444
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
中文描述: N溝道增強型射頻功率MOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 64K
代理商: ARF444
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
Figure 2, RF Power Out vs RF Power In
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
T
, CASE TEMPERATURE (
°
C)
Figure 3, Threshold Voltage vs Temperature
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Maximum DC Safe Operating Area
T
, JUNCTION TEMPERATURE (
°
C)
Figure 5, Breakdown Voltage vs Temperature
V
, D.5
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
C
I
D
,
I
D
,
R
B
D
(
V
G
(
V
(
0
10
20
30
40
0
2
4
6
8
-50
-25
0
25
50
75
100
125
150
1
5
10
50 100
1000
-50
-25
0
25
50
75
100
125 150
.01
.05
.1
1
5
10
50
100
300
ARF444/445
250
μ
SVDS = 30V
@ <0.5 % DUTY CYCLE
V
DS
= V
GS
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
OpeaionHee
LmtedByR
DS
(ON
TC = +25
°
C
TJ = +150
°
C
1200
800
400
0
16
12
8
4
0
10
5
1
.5
.1
5,000
1,000
500
100
50
10
Duty Cycle
= 50%
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
Crss
Ciss
Coss
Performance of aTypical
Push-Pull Power Amplifier (4-Devices)
f = 13.56 MHz
V
DD
= 300V
V
GS
= 0V
Continuous Wave
0
相關(guān)PDF資料
PDF描述
ARF445 N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
ARF446 N-CHANNEL ENHANCEMENT MODE
ARF447 N-CHANNEL ENHANCEMENT MODE
ARF448 N-CHANNEL ENHANCEMENT MODE
ARF448A ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
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