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參數(shù)資料
| 型號： | AS29F200T-90SI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| 中文描述： | 128K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封裝： | 0.600 INCH, SO-44 |
| 文件頁數(shù)： | 10/20頁 |
| 文件大?。?/td> | 375K |
| 代理商： | AS29F200T-90SI |
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VA = Byte address for programming. VA = any of the sector
addresses within the sector being erased during Sector Erase. VA
= valid address equals any non-protected sector group address
during Chip Erase.
DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not
change simultaneously.
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DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling
when DQ5 changes to 1.
Readbyte(DQ0–DQ7)
Address= VA
Readbyte(DQ0–DQ7)
Address= VA
NO
DONE
NO
NO
YES
FAIL
YES
YES
DONE
DQ7
=
data
DQ5
=
1
DQ7
=
data
Readbyte(DQ0–DQ7)
Address= dont care
Readbyte(DQ0–DQ7)
Address= dont care
NO
DONE
YES
YES
YES
FAIL
NO
NO
DONE
DQ6
=
toggle
DQ6
=
toggle
DQ5
=
1
相關PDF資料 |
PDF描述 |
|---|---|
| AS29F200T-90TC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90TI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS336 | Voltage Reference |
| AS336AT | Voltage Reference |
| AS336BN | Voltage Reference |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F200T-90TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29LV016 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory |
| AS29LV016BRG-100/ET | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory |
| AS29LV016BRG-100/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory |
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