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參數(shù)資料
| 型號(hào)： | AS29LV400T-80TC |
| 英文描述： | IC-SMD-4M FLASH TOP BOOT SECT |
| 中文描述： | 集成電路表面貼裝，4分閃光靴膚效應(yīng) |
| 文件頁數(shù)： | 4/25頁 |
| 文件大?。?/td> | 463K |
| 代理商： | AS29LV400T-80TC |
AS29LV800
3/22/01;
V.1.0
Alliance Semiconductor
P. 4 of 25
March 2001
Flexible sector architecture
Bottom boot sector architecture (AS29LV800B)
In word mode, there are one 8K word, two 4K word, one 16K word, and fifteen 32K word sectors. Address range is A18–A-1 if BYTE = V
IL
; address range is
A18–A0 if BYTE = V
IH
.
Temporary
sector
unprotect
Temporarily disables sector protection for in-system data changes to protected sectors. Apply +10V to RESET
to activate temporary sector unprotect mode. During temporary sector unprotect mode, program protected
sectors by selecting the appropriate sector address. All protected sectors revert to protected state on removal
of +10V from RESET.
RESET
Resets the interal state machine to read mode. If device is programming or erasing when RESET = L, data
may be corrupted.
Deep
power down
Hold RESET low to enter deep power down mode (
<
1 μA). Recovery time to start of first read cycle is 50ns.
Automatic
sleep mode
Enabled automatically when addresses remain stable for 300ns. Typical current draw is 1 μA. Existing data is
available to the system during this mode. If an address is changed, automatic sleep mode is disabled and new
data is returned within standard access times.
Sector
Top boot sector architecture (AS29LV800T)
×8
×16
Size
(Kbytes)
×8
×16
Size
(Kbytes)
0
00000h–03FFFh
00000h–01FFFh
16
00000h–0FFFFh
00000h–07FFFh
64
1
04000h–05FFFh
02000h–02FFFh
8
10000h–1FFFFh
08000h–0FFFFh
64
2
06000h–07FFFh
03000h–03FFFh
8
20000h–2FFFFh
10000h–17FFFh
64
3
08000h–0FFFFh
04000h–07FFFh
32
30000h–3FFFFh
18000h–1FFFFh
64
4
10000h–1FFFFh
08000h–0FFFFh
64
40000h–4FFFFh
20000h–27FFFh
64
5
20000h–2FFFFh
10000h–17FFFh
64
50000h–5FFFFh
28000h–2FFFFh
64
6
30000h–3FFFFh
18000h–1FFFFh
64
60000h–6FFFFh
30000h–37FFFh
64
7
40000h–4FFFFh
20000h–27FFFh
64
70000h–7FFFFh
38000h–3FFFFh
64
8
50000h–5FFFFh
28000h–2FFFFh
64
80000h–8FFFFh
40000h–47FFFh
64
9
60000h–6FFFFh
30000h–37FFFh
64
90000h–9FFFFh
48000h–4FFFFh
64
10
70000h–7FFFFh
38000h–3FFFFh
64
A0000h–AFFFFh
50000h–57FFFh
64
11
80000h–8FFFFh
40000h–47FFFh
64
B0000h–BFFFFh
58000h–5FFFFh
64
12
90000h–9FFFFh
48000h–4FFFFh
64
C0000h–CFFFFh
60000h–67FFFh
64
13
A0000h–AFFFFh
50000h–57FFFh
64
D0000h–DFFFFh
68000h–6FFFFh
64
14
B0000h–BFFFFh
58000h–5FFFFh
64
E0000h–EFFFFh
70000h–77FFFh
64
15
C0000h–CFFFFh
60000h–67FFFh
64
F0000h–F7FFFh
78000h–7BFFFh
32
16
D0000h–DFFFFh
68000h–6FFFFh
64
F8000h–F9FFFh
7C000h–7CFFFh
8
17
E0000h–EFFFFh
70000h–77FFFh
64
FA000h–FBFFFh
7D000h–7DFFFh
8
18
F0000h–FFFFFh
78000h–7FFFFh
64
FC000h–FFFFFh
7E000h–7FFFFh
16
Item
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29P200 | 5V 256K x 8 / 128K x 16 CMOS Flash EEPROM |
| AS29F200 | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-120SC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-120SI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-120TC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29LV400T-80TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
| AS29LV400T-90SC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
| AS29LV400T-90SI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
| AS29LV400T-90TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
| AS29LV400T-90TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
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