參數(shù)資料
型號(hào)： AS29P200
英文描述： 5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
中文描述： 5V的256K × 8 / × 16的CMOS 128K的閃存EEPROM
文件頁(yè)數(shù)： 17/20頁(yè)
文件大小： 375K
代理商： AS29P200
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Parameter
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Parameter
Input voltage (Input or DQ pin)
Input Voltage (A9 pin, OE, RESET)
Power supply voltage
Operating temperature
Storage temperature (Plastic)
Short circuit output current
Stresses greater than those listed under
AbsouteMaximumRatings
may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is not mplied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
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Parameter
Input voltage with respect to V
SS
on A9, OE, and RESET pin
Input voltage with respect to V
SS
on all DQ, address and control pins
Current
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0V, one pin at a time.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
+4.5
0
2.0
–0.5
Typical
5.0
0
-
-
Max
+5.5
0
V
CC
+ 0.5
0.8
Unit
V
V
V
V
Supply voltage
Input voltage
Symbol
V
IN
V
IN
V
CC
T
OPR
T
STG
I
OUT
Min
–2.0
–2.0
-0.5
–55
–65
-
Max
+7.0
+13.0
+5.5
+125
+150
200
Unit
V
V
V
°C
°C
mA
Min
-1.0
-1.0
-100
Max
+13.0
V
CC
+1.0
+100
Unit
V
V
mA
100 pF*
Device under Test
*including scope
and jig capacitance
V
SS
Test condition
Output load
Input rise and fall times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
-170
-200
1 TTL gate
5
0.0-2.0
1.0
1.0
Unit
ns
V
V
相關(guān)PDF資料
PDF描述
AS29F200 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
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