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參數(shù)資料
| 型號： | AS4C256K16F0-35JI |
| 英文描述： | x16 Fast Page Mode DRAM |
| 中文描述： | x16快速頁面模式的DRAM |
| 文件頁數(shù)： | 1/25頁 |
| 文件大?。?/td> | 521K |
| 代理商： | AS4C256K16F0-35JI |
Copyright Alliance Semiconductor. All rights reserved.
AS4C256K16FO
4/11/01;
V.0.9.1
Alliance Semiconductor
P. 1 of 25
5V 256K X 16 CMOS DRAM (Fast Page Mode)
Pin designation
Pin(s)
Description
A0 to A8
Address inputs
RAS
Row address strobe
I/O0 to I/O15
Input/output
OE
Output enable
UCAS
Column address strobe, upper byte
LCAS
Column address strobe, lower byte
WE
Read/write control
Power (+5V
±
10%)
Ground
V
CC
GND
Features
Organization: 262,144 words × 16 bits
High speed
- 25/30/35/50 ns RAS access time
- 12/16/18/25 ns column address access time
- 7/10/10/10 ns CAS access time
Low power consumption
- Active: 770 mW max (ASAS4C256K16FO-50)
- Standby:5.5 mW max, CMOS I/O
Fast page mode
AS4C256K16FO-50 timings
are also valid for
AS4C256K16FO-60.
Refresh
- 512 refresh cycles, 8 ms refresh interval
- RAS-only or CAS-before-RAS refresh or self-refresh
- Self-refresh option is available for new generation
device only. Contact Alliance for more information.
Read-modify-write
TTL-compatible, three-state I/O
JEDEC standard packages
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
Single 5V power supply/built-in V
bb
generator
Latch-up current > 200 mA
Pin arrangement
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
V
I/O0
I/O1
I/O2
I/O3
V
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
V
CC
V
I/O0
I/O1
I/O2
I/O3
V
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
V
CC
V
I/O15
I/O14
I/O13
I/O12
V
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
V
SS
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
TSOP II
A
A
Selection guide
Symbol
–25
–30
–35
–50
Unit
Maximum RAS access time
t
RAC
25
30
35
50
ns
Maximum column address
access time
t
CAA
12
16
18
25
ns
Maximum CAS access time
t
CAC
7
10
10
10
ns
Maximum output enable (OE)
access time
t
OEA
7
10
10
10
ns
Minimum read or write cycle
time
t
RC
40
65
70
85
ns
Minimum EDO page mode
cycle time
t
PC
12
12
14
25
ns
Maximum operating current
I
CC1
200
180
160
140
mA
Maximum CMOS standby
current
I
CC2
2.0
2.0
2.0
2.0
mA
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| AS4C256K16F0-35TC | x16 Fast Page Mode DRAM |
| AS4C4M4 | 16384Kbits 4M x 4 Replacement with DSCC 5962-n/a | DRAM |
| AS4C4M4E0-70JC | x4 EDO Page Mode DRAM |
| AS4C4M4E1-50JC | x4 EDO Page Mode DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C256K16F0-35TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
| AS4C256K16F0-35TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| AS4C256K16F0-50JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
| AS4C256K16F0-50JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
| AS4C256K16F0-50TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
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