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參數(shù)資料
| 型號： | AS4C4M4E1-60TC |
| 英文描述： | x4 EDO Page Mode DRAM |
| 中文描述： | x4 EDO公司頁面模式的DRAM |
| 文件頁數(shù)： | 2/19頁 |
| 文件大小： | 986K |
| 代理商： | AS4C4M4E1-60TC |
16 Me
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
AS4C4M4
Rev. 1.0 5/03
FUNCTIONAL BLOCK DIAGRAM
RAS\
V
CC
V
SS
CAS\
W\
(A0 - A10)
(A0 - A10)
OE\
DQ0
to
DQ3
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Memory Array
4,194,304 x 4
Cells
Row Decoder
Column Decoder
S
Data In
Buffer
Data Out
Buffer
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability. Junction temperature depends
upon package type, cycle time, loading, ambient temperature
and airflow, and humidity (plastics).
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to V
(V
IN
, V
OUT
) .....-1.0V to +7.0V
Voltage on V
supply relative to V
(V
Storage Temperature (T
)................................-55°C to +150°C
Power Dissipation (P
).............................................................1W
Short Circuit Output Current (I
OS
Address).........................50mA
ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MIN
Supply Voltage
V
CC
4.5
Input High Voltage
V
IH
2.4
Input Low Voltage
V
IL
TYP
5.0
MAX
5.5
UNITS
V
---
V
CC
+ 0.5
1
0.8
V
-0.5
2
---
V
NOTES:
1. V
CC
+ 2.0V/20ns, Pulse width is measured at V
CC
2. -2.0V/20ns, Pulse width is measured at V
SS
相關PDF資料 |
PDF描述 |
|---|---|
| AS4C4M4E1-60TI | x4 EDO Page Mode DRAM |
| AS4C4M4E1Q | 4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4EOQ | Thick Film Chip Resistor - RMC 1 3.9 5% R |
| AS4C4M4F0 | 5V 4M x 4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F0-50JC | x4 Fast Page Mode DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C4M4E1-60TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4C4M4E1Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4EOQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4F0 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:5V 4M x 4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F0-50 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
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