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參數(shù)資料
| 型號(hào)： | AS4C4M4E1-60TC |
| 英文描述： | x4 EDO Page Mode DRAM |
| 中文描述： | x4 EDO公司頁(yè)面模式的DRAM |
| 文件頁(yè)數(shù)： | 5/19頁(yè) |
| 文件大小： | 986K |
| 代理商： | AS4C4M4E1-60TC |
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16 Me
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
AS4C4M4
Rev. 1.0 5/03
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
1,2
(CONTINUED)
MIN
0
MAX
MIN
0
MAX
t
DS
Data set-up time
ns
9
t
DH
Data hold time
10
12
ns
9
t
REF
Refresh period
32
32
ms
t
WCS
Write command set-up time
0
0
ns
7
t
CWD
CAS\ to W\ delay time
40
45
ns
7
t
RWD
RAS\ to W\ delay time
85
90
ns
7
t
AWD
Column address to W\ delay time
55
60
ns
7
t
CPWD
CAS\ precharge to W\ delay time
60
65
ns
t
CSR
CAS\ set-up time (CAS\-before-RAS\ refresh)
5
5
ns
t
CHR
CAS\ hold time (CAS\-before-RAS\ refresh)
10
15
ns
t
RPC
RAS\ to CAS\ precharge time
5
5
ns
t
CPA
Access time from CAS\ precharge
35
40
ns
3
t
PC
Fast Page cycle time
40
45
ns
t
PRWC
Fast Page read-modify-write cycle time
85
95
ns
t
CP
CAS\ precharge time (Fast Page Cycle)
10
10
ns
t
RASP
RAS\ pulse width (Fast Page Cycle)
60
100K
70
100K
ns
t
RHCP
RAS\ hold time from CAS\ precharge
35
40
ns
t
OEA
OE\ access time
15
17
ns
t
OED
OE\ to data delay
15
17
ns
t
OEZ
Output buffer turn off delay time from OE\
0
15
0
17
ns
6
t
OEH
OE\ command hold time
15
17
ns
t
WTS
Write command set-up time (Test mode in)
10
10
ns
11
t
WTH
Write command hold time (Test mode in)
10
10
ns
11
t
WRP
W\ to RAS\ precharge time (C\-B-R\ refresh)
10
10
ns
t
WRH
W\ to RAS\ hold time (C\-B-R\ refresh)
10
10
ns
t
RASS
RAS\ pulse width (C\-B-R\ self refresh)
100
110
us
13, 14, 15
t
RPS
RAS\ precharge time (C\-B-R\ self refresh)
110
120
ns
13, 14, 15
t
CHS
CAS\ hold time (C\-B-R\ self refresh)
-50
-50
ns
13, 14, 15
UNITS
NOTES
SYMBOL
PARAMETER
-60
-70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4C4M4E1-60TI | x4 EDO Page Mode DRAM |
| AS4C4M4E1Q | 4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4EOQ | Thick Film Chip Resistor - RMC 1 3.9 5% R |
| AS4C4M4F0 | 5V 4M x 4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F0-50JC | x4 Fast Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C4M4E1-60TI | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4C4M4E1Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4EOQ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4F0 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:5V 4M x 4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F0-50 | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
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