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參數(shù)資料
| 型號： | AS4LC4M4E1 |
| 英文描述： | 4M x 4 CMOS DRAM (EDO) Family |
| 中文描述： | 4米× 4的CMOS內(nèi)存（江戶）家庭 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 265K |
| 代理商： | AS4LC4M4E1 |
AS4LC4M4E0
AS4LC4M4E1
4/11/01; V1.1
Alliance Semiconductor
P. 5 of 15
AC parameters common to all waveforms
Read cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CP
t
RAL
t
ASC
t
CAH
Random read or write cycle time
80
–
100
–
ns
RAS
precharge time
30
–
40
–
ns
RAS
pulse width
50
10K
60
10K
ns
CAS
pulse width
8
10K
10
10K
ns
RAS
to
CAS
delay time
15
35
15
43
ns
6
RAS
to column address delay time
12
25
12
30
ns
7
CAS
to
RAS
hold time
10
–
10
–
ns
RAS
to
CAS
hold time
40
–
50
–
ns
CAS
to
RAS
precharge time
5
–
5
–
ns
Row address setup time
0
–
0
–
ns
Row address hold time
8
–
10
–
ns
Transition time (rise and fall)
1
50
1
50
ns
4,5
Refresh period
–
64
–
64
ms
3
CAS precharge time
8
–
10
–
ns
Column address to
RAS
lead time
25
–
30
–
ns
Column address setup time
0
–
0
–
ns
Column address hold time
8
10
–
ns
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
Access time from
RAS
–
50
–
60
ns
6
Access time from
CAS
–
12
–
15
ns
6,13
Access time from address
–
25
–
30
ns
7,13
Read command setup time
0
–
0
–
ns
Read command hold time to
CAS
0
–
0
–
ns
9
Read command hold time to
RAS
0
–
0
–
ns
9
相關PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M4E1-50JC | x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50JI | x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50TC | x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50TI | x4 EDO Page Mode DRAM |
| AS4LC4M4E1-60JC | x4 EDO Page Mode DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC4M4E1-50JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4LC4M4E1-60JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
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