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參數(shù)資料
| 型號(hào)： | AS5C1008-15 |
| 廠商： | Austin Semiconductor, Inc |
| 英文描述： | 128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM |
| 中文描述： | 128K的× 8的SRAM耐用塑料高速SRAM |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | AS5C1008-15 |
SRAM
AS5C1008
Austin Semiconductor, Inc.
AS5C1008
Rev. 3.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C<T
A
<+125
o
C or -40
o
C to +85
o
C; Vcc = 5V+10%)
DESCRIPTION
SYMBOL
1
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
READ CYCLE
Read Cycle Time
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
AOE
t
LZOE
t
HZOE
15
20
25
ns
Address Access Time
15
20
25
ns
Chip Enable Access Time
15
20
25
ns
Output Hold from Address Change
3
3
3
ns
Chip Enable to Output in Low-Z
3
3
3
ns
Chip Disable to Output in High-Z
7
8
10
ns
Output Enable Access Time
7
7
10
ns
Output Enable to Output in Low-Z
0
0
0
ns
Output Disable to Output in High-Z
WRITE CYCLE
Write Cycle Time
7
8
10
ns
t
WC
t
CW
t
AW
t
AS
t
AH
t
WP
t
DS
t
DH
t
LZWE
t
HZWE
15
20
25
ns
Chip Enable to End of Write
12
15
20
ns
Address Valid to End of Write
12
15
20
ns
Address Set-up Time
0
0
0
ns
Address Hold from End of Write
0
0
0
ns
Write Pulse Width (OE\ > V
IH
)
Data Set-up Time
12
15
20
ns
8
10
15
ns
Data Hold Time
0
0
0
ns
Write Disable to Output in Low-Z
5
5
5
ns
Write Enable to Output in High-Z
7
9
10
ns
-15
-20
-25
NOTE:
1. t
LZCE
, t
LZWE
, t
HZCE
, t
LZOE
, and t
HZOE
are simulated values.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS5C1008-20 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM |
| AS5C1008-25 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM |
| AS5C1008DJ-15/IT | 制造商:Micross Components 功能描述:SRAM, 1MB - Rail/Tube |
| AS5C1008DJ-15/XT | 制造商:Micross Components 功能描述:SRAM, 1MB - Rail/Tube |
| AS5C1008DJ-20/IT | 制造商:Micross Components, Inc. 功能描述:SRAM, 1MB - Rail/Tube |
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