參數(shù)資料
型號: AS8501-ASOT
廠商: ams
文件頁數(shù): 37/41頁
文件大?。?/td> 0K
描述: IC CURRENT MEASURE SOLAR 16-SOIC
標準包裝: 1,500
類型: 數(shù)據(jù)采集系統(tǒng)(DAS)
輸入類型: 模擬,數(shù)字
輸出類型: 模擬,數(shù)字
接口: 串行
電流 - 電源: 5mA
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 帶卷 (TR)
AS8501 - Data Sheet
austriamicrosystems
Revision 1.1, 04-April-06
www.austriamicrosystems.com
Page 4 of 40
5
Absolute Maximum Ratings
Stress beyond those listed under “Absolute Maximum Ratings“ may cause permanent damage to the device. These are stress ratings only. Functional
operation of the device at these or any other conditions beyond those indicated under “Operating Conditions” is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability. All voltages are defined with respect to VSS and VSSD. Positive currents
flow into the IC.
Absolute maximum ratings (TA = -40°C to 125°C unless otherwise specified)
Nr.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
NOTE
0
Supply voltage
Analogue VDDA and digital VDDD
VDD
-0.3
7.0
V
Polarity inversion externally
protected
1
Input pin voltage
Vin
-0.3
VDD +0.3
V
2
Input current
(latch-up immunity)
ISCR
-100
100
mA
JEDEC 17
3
Electrostatic discharge
ESD
-2
2
kV
1)
4
Ambient temperature
TA
-40
125
O
C
(Tj = 150°C)
5
Storage temperature
TSTRG
-55
150
O
C
6
Soldering conditions
TLEAD
260
°C
2)
7
Humidity, non-condensing
5
85
%
8
Thermal resistance
RthJA
75
K/W
9
Power dissipation
PTOT
350
mW
Notes:
1)
MIL 883 E method 3015, HBM: R =1.5 k
", C =100pF.
2)
Jedec Std – 020C, lead free
ams
AG
Technical
content
still
valid
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