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| 型號(hào)： | AT-30511TR1 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大小： | 101K |
| 代理商： | AT-30511TR1 |
4-30
AT-30533 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 5 V, I
C
= 1 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
0.3
0.4
0.9
1.3
R
n
Mag
0.94
0.89
0.75
0.65
Ang
7
16
43
65
1.02
0.98
0.58
0.38
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters,
V
CE
= 5 V, I
C
= 1 mA
,
Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.96
-5
10.59
3.38
0.5
0.92
-22
10.07
3.19
0.9
0.79
-37
9.32
2.92
1.0
0.77
-41
8.94
2.80
1.5
0.60
-57
7.76
2.44
1.8
0.51
-64
7.01
2.24
2.0
0.46
-69
6.61
2.14
2.4
0.35
-76
5.59
1.90
3.0
0.23
-83
4.43
1.66
4.0
0.07
-85
2.92
1.40
5.0
0.07
38
1.79
1.23
S
12
Mag
0.01
0.05
0.08
0.09
0.11
0.12
0.13
0.14
0.17
0.22
0.29
S
22
dB
-39.38
-26.22
-21.99
-21.21
-19.02
-18.16
-17.66
-16.85
-15.58
-13.34
-10.85
Ang
85
74
65
63
56
54
52
51
51
52
49
Mag
0.999
0.95
0.91
0.90
0.83
0.80
0.78
0.75
0.72
0.69
0.67
Ang
-2
-13
-21
-23
-30
-33
-35
-39
-43
-53
-65
174
151
131
127
106
95
89
77
61
41
23
AT-30511 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 5 V, I
C
= 1 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
0.3
0.4
0.9
1.3
R
n
Mag
0.96
0.92
0.83
0.76
Ang
10
19
43
60
1.49
1.33
0.98
0.74
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Scattering Parameters,
V
CE
= 5 V, I
C
= 1 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.98
-5
10.56
3.37
0.5
0.96
-21
10.30
3.27
0.9
0.88
-37
9.83
3.10
1.0
0.85
-41
9.57
3.01
1.5
0.74
-59
8.71
2.73
1.8
0.67
-69
8.13
2.55
2.0
0.63
-75
7.88
2.48
2.4
0.55
-88
6.90
2.21
3.0
0.43
-106
5.79
1.95
4.0
0.31
-138
4.29
1.64
5.0
0.25
178
3.04
1.42
S
12
Mag
0.01
0.04
0.07
0.08
0.11
0.12
0.13
0.14
0.15
0.16
0.17
S
22
dB
-40.34
-26.99
-22.52
-21.75
-19.23
-18.34
-17.85
-17.23
-16.53
-15.83
-15.38
Ang
87
74
64
62
51
45
42
37
31
23
20
Mag
0.999
0.96
0.93
0.92
0.86
0.82
0.80
0.77
0.72
0.67
0.64
Ang
-2
-13
-22
-24
-33
-38
-41
-45
-50
-60
-69
175
157
139
136
116
106
100
87
71
49
29
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
MSG
Figure 24. AT-30533 Gains vs.
Frequency at V
CE
= 5 V, I
C
= 1 mA.
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
Figure 23. AT-30511 Gains vs.
Frequency at V
CE
= 5 V, I
C
= 1 mA.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-30533 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30511-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30511BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-30511-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30511-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-30511-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT30533 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 10MA I(C) | SOT-23 |
| AT-30533 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
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