參數(shù)資料
型號： AT-30511TR1
英文描述： Low Current, High Performance NPN Silicon Bipolar Transistor
中文描述： 低電流，高性能NPN硅雙極晶體管
文件頁數(shù)： 9/10頁
文件大?。?/td> 101K
代理商： AT-30511TR1
4-31
AT-30533 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 5 V, I
C
= 5 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
1.1
1.2
1.5
1.8
R
n
Mag
0.71
0.61
0.42
0.28
Ang
8
16
39
57
0.78
0.66
0.41
0.25
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters,
V
CE
= 5 V, I
C
= 5 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.86
-11
22.22
12.92
0.5
0.59
-37
18.69
8.60
0.9
0.40
-43
15.19
5.75
1.0
0.37
-43
14.43
5.27
1.5
0.27
-40
11.49
3.75
1.8
0.24
-37
10.11
3.20
2.0
0.23
-35
9.33
2.93
2.4
0.20
-30
7.97
2.50
3.0
0.18
-24
6.40
2.09
4.0
0.17
-14
4.58
1.70
5.0
0.16
-2
3.37
1.47
S
12
Mag
0.01
0.04
0.06
0.07
0.10
0.11
0.13
0.15
0.19
0.25
0.32
S
22
dB
-40.16
-28.05
-24.14
-23.37
-20.30
-18.88
-18.05
-16.55
-14.64
-12.00
-9.83
Ang
83
72
70
70
68
67
66
64
61
54
46
Mag
0.98
0.81
0.74
0.73
0.70
0.69
0.68
0.67
0.66
0.64
0.61
Ang
-5
-18
-22
-22
-26
-28
-30
-33
-38
-49
-60
165
122
101
97
82
75
70
62
51
36
21
AT-30511 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 5 V, I
C
= 5 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
1.1
1.2
1.5
1.8
R
n
Mag
0.77
0.71
0.60
0.51
Ang
9
18
45
65
1.10
0.96
0.66
0.47
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Scattering Parameters,
V
CE
= 5 V, I
C
= 5 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.90
-10
22.26
12.98
0.5
0.74
-43
20.41
10.49
0.9
0.53
-66
17.93
7.88
1.0
0.49
-70
17.28
7.31
1.5
0.33
-89
14.72
5.45
1.8
0.27
-99
13.41
4.68
2.0
0.24
-105
12.64
4.29
2.4
0.18
-120
11.27
3.66
3.0
0.12
-147
9.54
3.00
4.0
0.11
154
7.41
2.35
5.0
0.17
114
5.86
1.96
S
12
Mag
0.01
0.04
0.06
0.06
0.08
0.08
0.09
0.10
0.12
0.15
0.18
S
22
dB
-40.75
-28.46
-25.18
-24.53
-22.46
-21.45
-20.87
-19.79
-18.34
-16.45
-14.84
Ang
82
66
58
57
54
53
52
50
48
43
38
Mag
0.97
0.83
0.72
0.70
0.63
0.60
0.59
0.57
0.55
0.53
0.52
Ang
-5
-22
-30
-31
-36
-38
-39
-42
-46
-55
-63
170
136
113
109
91
83
78
69
57
40
24
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
Figure 25. AT-30511 Gains vs.
Frequency at V
CE
= 5 V, I
C
= 5 mA.
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
MSG
Figure 26. AT-30533 Gains vs.
Frequency at V
CE
= 5 V, I
C
= 5 mA.
相關(guān)PDF資料
PDF描述
AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30533-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30511-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30511BLK Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30533BLK Low Current, High Performance NPN Silicon Bipolar Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT-30511-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30511-TR1G 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT-30511-TR2G 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT30533 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 10MA I(C) | SOT-23
AT-30533 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor
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