參數(shù)資料
型號： AT-30533TR1
英文描述： Low Current, High Performance NPN Silicon Bipolar Transistor
中文描述： 低電流，高性能NPN硅雙極晶體管
文件頁數(shù)： 6/10頁
文件大小： 101K
代理商： AT-30533TR1
4-28
AT-30533 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 2.7 V, I
C
= 1 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
0.3
0.4
0.9
1.3
R
n
Mag
0.94
0.89
0.75
0.65
Ang
7
16
43
65
1.02
0.88
0.58
0.38
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Scattering Parameters,
V
CE
= 2.7 V, I
C
= 1 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.97
-5
10.88
3.50
175
0.5
0.95
-23
10.58
3.38
156
0.9
0.86
-39
10.09
3.20
139
1.0
0.84
-43
9.83
3.10
135
1.5
0.72
-63
8.94
2.80
115
1.8
0.65
-73
8.32
2.60
105
2.0
0.61
-80
8.06
2.53
2.4
0.52
-93
7.06
2.25
3.0
0.41
-114
5.92
1.98
4.0
0.30
-150
4.35
1.65
5.0
0.26
165
3.06
1.42
S
12
Mag
0.01
0.05
0.08
0.08
0.11
0.12
0.13
0.14
0.15
0.16
0.16
S
22
dB
-40.13
-26.71
-22.28
-21.51
-19.15
-18.28
-17.83
-17.29
-16.72
-16.13
-15.65
Ang
86
74
63
60
49
43
40
35
30
23
22
Mag
0.999
0.96
0.93
0.92
0.85
0.82
0.79
0.75
0.70
0.66
0.63
Ang
-2
-13
-23
-25
-34
-38
-41
-46
-51
-61
-69
99
86
70
48
28
AT-30511 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 2.7 V, I
C
= 1 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
0.3
0.4
0.9
1.3
R
n
Mag
0.96
0.92
0.83
0.76
Ang
10
19
43
60
1.49
1.33
0.98
0.74
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters,
V
CE
= 2.7 V, I
C
= 1 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.95
-5
10.76
3.45
174
0.5
0.92
-23
10.21
3.24
151
0.9
0.78
-39
9.42
2.96
130
1.0
0.75
-42
9.04
2.83
126
1.5
0.58
-59
7.83
2.46
105
1.8
0.49
-66
7.04
2.25
94
2.0
0.44
-71
6.64
2.15
88
2.4
0.33
-79
5.59
1.90
76
3.0
0.21
-87
4.40
1.66
60
4.0
0.05
-88
2.87
1.39
40
5.0
0.09
47
1.72
1.22
22
S
12
Mag
0.01
0.05
0.08
0.09
0.11
0.12
0.13
0.15
0.17
0.22
0.29
S
22
dB
-39.49
-26.05
-21.78
-21.05
-18.88
-18.08
-17.58
-16.77
-15.50
-13.20
-10.67
Ang
87
74
64
63
55
53
52
51
51
52
49
Mag
0.999
0.95
0.91
0.90
0.83
0.79
0.77
0.74
0.71
0.68
0.66
Ang
-2
-13
-22
-23
-31
-34
-36
-39
-44
-54
-66
Figure 19. AT-30511 Gains vs.
Frequency at V
CE
= 2.7 V, I
C
= 1 mA.
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
Figure 20. AT-30511- Gains vs.
Frequency at V
CE
= 2 .7 V, I
C
= 1 mA.
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
MSG
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT-30533-TR1 制造商:Hewlett Packard Co 功能描述:
AT-30533-TR1G 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT-30533-TR2G 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT305AC 制造商:MCM 功能描述:CHARGER AND CHARGER CABLE
AT305SEAC 制造商:Toshiba America Electronic Components 功能描述:AC ADAPTER
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