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參數(shù)資料
| 型號(hào)： | AT-31033-TR1 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | AT-31033-TR1 |
4-34
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum
[1]
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
V
V
V
1.5
11
5.5
16
150
150
mA
mW
°
C
°
C
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
Mounting Surface
= 25
°
C.
3. Derate at 1.82 mW/
°
C for T
C
> 67.5
°
C.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
Electrical Specifications, T
A
= 25
°
C
AT-31011
Min
Typ
AT-31033
Min
Typ
Symbol
Parameters and Test Conditions
Units
Max
Max
NF
Noise Figure
V
CE
= 2.7 V, I
C
= 1 mA
Associated Gain
V
CE
= 2.7 V, I
C
= 1 mA
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
f = 0.9 GHz
dB
0.9
[1]
1.2
[1]
0.9
[2]
1.2
[2]
G
A
f = 0.9 GHz
V
CE
= 2.7 V
I
C
= 1 mA
V
CB
= 3 V
V
EB
= 1 V
dB
-
11
[1]
70
13
[1]
9
[2]
70
11
[2]
h
FE
300
300
I
CBO
I
EBO
μ
A
μ
A
0.05
0.1
0.2
1.5
0.05
0.1
0.2
1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
1000 pF
V
BB
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
W = 30 L = 100
W = 10 L = 1860
1000 pF
V
CC
25
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
ε
= 4.8)
DIMENSIONS IN MILS
Thermal Resistance
[2]
:
θ
jc
= 550
°
C/W
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| AT-31033-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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