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參數(shù)資料
| 型號(hào)： | AT-31033-TR1 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | AT-31033-TR1 |
4-35
P
0
0
FREQUENCY (GHz)
1.0
1.5
10
4
2
0.5
2.5
6
2.0
8
10 mA
5 mA
2 mA
2 mA
5 mA
10 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
10 mA
1 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
10 mA
Characterization Information, T
A
= 25
°
AT-31011 AT-31033
Typ
Symbol
Parameters and Test Conditions
Units
Typ
P
1dB
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA
Output Third Order Intercept Point,
V
CE
= 2.7 V, I
C
= 10 mA (opt tuning)
Gain in 50
System; V
CE
= 2.7 V, I
C
= 1 mA
Collector-Base Capacitance
f = 0.9 GHz
dBm
9
9
G
1dB
f = 0.9 GHz
dB
15
13
IP
3
f = 0.9 GHz
f = 0.9 GHz
dBm
dB
pF
20
10
0.04
20
9
0.04
|S
21
|
E2
C
CB
V
CB
= 3V, f = 1 MHz
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 2.7 V.
Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier
NF
[1]
vs. Frequency and Current at
V
CE
= 2.7 V.
C
N
0
0
FREQUENCY (GHz)
1
1.5
2.5
1
0.5
0.5
2.5
1.5
2
2
1 mA
10 mA
AMPLIFIER NF
NF MIN.
G
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
10 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
16
4
0.5
2.5
8
2.0
12
2 mA
5 mA
10 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-32032 | Low Current, High Performance NPN Silicon Bipolar Transistor(小電流，高性能NPN硅雙極型晶體管) |
| AT-32033-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32011 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32011-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32011-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-31033-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-31033-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT310-38/42-4 | 制造商:Block 功能描述:3 phase autotransformer,380-400V 10kVA |
| AT310-44/46-4 | 制造商:Block USA Inc. 功能描述:3 phase autotransformer,440-400V 10kVA |
| AT310-48/50-4 | 制造商:Block 功能描述:3 phase autotransformer,480-400V 10kVA |
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