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參數(shù)資料
| 型號： | AT-41485 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | AT-41485 |
4-125
AT-41485 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
60
PT
Power Dissipation [2,3]
mW
500
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance[2,4]:
θ
jc = 155°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/
°C for T
C > 73°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 1.0 GHz
dB
17.5
f = 2.0 GHz
11.5
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
18.5
VCE = 8 V, IC = 25 mA
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
14.0
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
1.4
1.8
f = 2.0 GHz
1.7
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
17.5
18.5
f = 2.0 GHz
13.5
f = 4.0 GHz
9.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
—
30
150
270
ICBO
Collector Cutoff Current; VCB = 8 V
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
A
1.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
0.25
Notes:
1. For this test, the emitter is grounded.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT41486 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| AT-41486 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| AT-41486-BLK | 功能描述:TRANS SIL LOW NOISE BIPOLAR 86PL RoHS:否 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-41486-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT41486TR1 | 制造商:HP 功能描述:* |
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