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參數(shù)資料
| 型號(hào)： | AT-42000-GP4 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 168K |
| 代理商： | AT-42000-GP4 |
AT-42000
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip
Data Sheet
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
Description
Avago’s AT-42000 is a general purpose NPN bipolar transis-
tor chip that offers excellent high frequency performance.
The 4 micron emitter-to-emitter pitch enables this transis-
tor to be used in many different functions. The 20 emit-
ter finger interdigitated geometry yields a medium sized
transistor with impedances that are easy to match for low
noise and medium power applications.
This device is designed for use in low noise, wideband am-
plifier, mixer and oscillator applications in the VHF, UHF,
and microwave frequencies. An optimum noise match
near 50W up to 1 GHz , makes this device easy to use as a
low noise amplifier.
The AT-42000 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ionimplantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
The recommended assembly procedure is gold-eutectic
die attach at 400oC and either wedge or ball bonding us-
ing 0.7 mil gold wire. See APPLICATIONS section, “Chip
Use”.
Features
High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB
Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
Low Noise Figure: 1.9 dB
Typical NFO at 2.0 GHz
High Gain-Bandwidth
Product: 9.0 GHz Typical fT
Chip Outline
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT42010 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | SOT-100VAR |
| AT-42010 | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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