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參數(shù)資料
| 型號(hào)： | AT-41533-BLKG |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMT, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 119K |
| 代理商： | AT-41533-BLKG |
AT-41511, AT-41533
General Purpose, Low Noise NPN
Silicon Bipolar Transistors
Data Sheet
Description
Avago’s AT-41511 and AT-41533 are general purpose NPN
bipolar transistors that oer excellent high frequency
performance at an economical price. The AT-41533 uses
the 3 lead SOT-23, while the AT-41511 places the same
die in the lower parasitic 4 lead SOT-143. Both packages
are industry standard, and compatible with high volume
surface mount assembly techniques.
The 4 micron emitter-to-emitter pitch of these transistors
yields high performance products that can perform a
multiplicity of tasks. The 14 emitter nger interdigitated
geometry yields an intermediate-sized transistor with easy
to match to impedances, low noise gure, and moderate
power.
Optimized for best performace from a 5 to 8 volt bias
supply, these transistors are also good performers at 2.7
V. Applications include use in wireless systems as an LNA,
gain stage, buer, oscillator, or active mixer.
An optimum noise match near 50 ohms at 900 MHz makes
thesedevicesparticularlyeasytouseasLNAs.Typicalampli-
er designs at 900 MHz yield 1 dB noise gures with 15 dB
or more associated gain at a 5 V, 5 mA bias, with good gain
and noise gure obtainable at biases as low as 2 mA.
The AT-415 series bipolar transistors are fabricated using
Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die are nitride passivated for surface protection. Ex-
cellent device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
Features
x General Purpose NPN Bipolar Transistor
x 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
x Characterized for 3, 5, and 8Volt Use
x SOT-23 and SOT-143 SMT Plastic Packages
x Tape-and-Reel Packaging Option Available
x Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identication.
"x" is the date code.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
415x
SOT 23 (AT-41533)
SOT 143 (AT-41511)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-41511-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR2G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42000-GP4G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42000-GP4 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41533-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| AT-41533-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-41533-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41533-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41535 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor |
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