參數(shù)資料
型號(hào)： AT91SAM7XC256-CU-999
廠商： Atmel
文件頁(yè)數(shù)： 10/47頁(yè)
文件大?。?/td> 0K
描述： IC MCU ARM7 256KB FLASH 100TFBGA
產(chǎn)品培訓(xùn)模塊： SAM9 MPU Boot Solutions & Application Deployment
AT91SAM7X and SAM7XC Flash-based Microcontrollers
MCU Product Line Introduction
標(biāo)準(zhǔn)包裝： 3,000
系列： SAM7XC
核心處理器： ARM7
芯體尺寸： 16/32-位
速度： 55MHz
連通性： CAN，以太網(wǎng)，I²C，SPI，SSC，UART/USART，USB
外圍設(shè)備： 欠壓檢測(cè)/復(fù)位，DMA，POR，PWM，WDT
輸入/輸出數(shù)： 62
程序存儲(chǔ)器容量： 256KB（256K x 8）
程序存儲(chǔ)器類(lèi)型： 閃存
RAM 容量： 64K x 8
電壓 - 電源 (Vcc/Vdd)： 1.65 V ~ 1.95 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 100-TFBGA
包裝： 帶卷 (TR)
配用： AT91SAM-ICE-ND - EMULATOR FOR AT91 ARM7/ARM9
AT91SAM7XC-EK-ND - KIT EVAL FOR AT91SAM7XC256/128
18
6209DS–ATARM–17-Feb-09
AT91SAM7XC512/256/128
8.
Memory
8.1
AT91SAM7XC512
512 Kbytes of dual-plane Flash Memory
– 2 contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, protecting 32 sectors of 64 pages
– Protection Mode to secure contents of the Flash
128 Kbytes of Fast SRAM
– Single-cycle access at full speed
8.2
AT91SAM7XC256
256 Kbytes of Flash Memory
– 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 sectors of 64 pages
– Protection Mode to secure contents of the Flash
64 Kbytes of Fast SRAM
– Single-cycle access at full speed
8.3
AT91SAM7XC128
128 Kbytes of Flash Memory
– 512 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 sectors of 64 pages
– Protection Mode to secure contents of the Flash
32 Kbytes of Fast SRAM
– Single-cycle access at full speed
相關(guān)PDF資料
PDF描述
AT91SAM7X256-CU-999 IC MCU ARM7 256KB FLASH 100TFBGA
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