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參數(shù)資料
| 型號(hào)： | ATF-33143-TR2 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 10/18頁 |
| 文件大小： | 154K |
| 代理商： | ATF-33143-TR2 |
Tape Dimensions and Product Orientation
For Outline 4T
P
P0
P2
F
W
C
D1
D
E
A0
10
° MAX.
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
10
° MAX.
B0
K0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40
± 0.10
2.40
± 0.10
1.20
± 0.10
4.00
± 0.10
1.00 + 0.25
0.094
± 0.004
0.094
± 0.004
0.047
± 0.004
0.157
± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P0
E
1.55
± 0.10
4.00
± 0.10
1.75
± 0.10
0.061 + 0.002
0.157
± 0.004
0.069
± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254
± 0.02
0.315 + 0.012
0.0100
± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50
± 0.05
2.00
± 0.05
0.138
± 0.002
0.079
± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.40
± 0.10
0.062
± 0.001
0.205 + 0.004
0.0025
± 0.0004
COVER TAPE
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte.
in the United States and other countries.
Data subject to change. Copyright 2006 Avago Technologies Pte. All rights reserved.
Obsoletes 5989-1917EN
5989-3747EN January 6, 2006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-33143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189 | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| ATS535SSB | PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT |
| ATS535JSB | PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-33143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF331M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
| ATF-331M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-331M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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