參數(shù)資料
型號(hào)： ATF-33143-TR2
元件分類： 小信號(hào)晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 2/18頁(yè)
文件大?。?/td> 154K
代理商： ATF-33143-TR2
10
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-33143 Typical Noise Parameters
VDS = 3 V, IDS = 60 mA
Freq.
Fmin
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.23
0.43
29.20
0.06
25.64
0.9
0.28
0.35
42.40
0.06
21.62
1.0
0.29
0.35
45.00
0.07
20.87
1.5
0.34
0.26
68.80
0.06
17.84
1.8
0.34
0.23
93.30
0.04
16.89
2.0
0.38
0.22
109.70
0.05
16.24
2.5
0.52
0.25
150.60
0.03
14.93
3.0
0.53
0.30
167.50
0.03
13.52
4.0
0.61
0.39
-160.30
0.04
11.65
5.0
0.68
0.47
-134.70
0.06
10.28
6.0
0.83
0.52
-112.10
0.11
9.09
7.0
0.91
0.58
-89.70
0.22
8.09
8.0
1.04
0.61
-71.50
0.36
7.07
9.0
1.09
0.66
-54.80
0.56
6.43
10.0
1.13
0.70
-41.40
0.73
6.15
ATF-33143 Typical Scattering Parameters, V
DS = 3 V, IDS = 60 mA
Freq.
S11
S21
S12
S22
MSG/MAG
(GHz)
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
(dB)
0.5
0.87
-75.30
22.95
14.06
133.00
-28.18
0.039
55.10
0.27
-124.20
25.57
0.8
0.78
-114.70
20.22
10.26
110.00
-25.19
0.055
42.60
0.36
-153.90
22.71
1.0
0.77
-122.30
19.59
9.56
105.50
-24.89
0.057
40.50
0.37
-158.80
22.24
1.5
0.74
-151.60
16.78
6.91
87.60
-23.37
0.068
33.50
0.41
-178.70
20.07
1.8
0.73
-164.60
15.35
5.87
79.30
-22.87
0.072
30.80
0.43
172.60
19.11
2.0
0.73
-171.80
14.47
5.30
74.40
-22.53
0.075
29.00
0.44
167.50
18.49
2.5
0.73
171.00
12.60
4.27
62.80
-21.76
0.082
25.10
0.47
158.50
17.17
3.0
0.74
158.10
10.99
3.54
53.10
-21.07
0.089
21.40
0.50
151.00
16.00
4.0
0.75
136.40
8.56
2.68
35.40
-19.79
0.103
13.20
0.52
138.60
14.15
5.0
0.75
116.90
6.80
2.19
17.70
-18.68
0.117
2.80
0.52
124.40
11.53
6.0
0.77
97.80
5.28
1.84
-0.60
-17.88
0.128
-9.70
0.53
107.80
10.03
7.0
0.79
79.90
3.71
1.53
-18.60
-17.42
0.135
-23.20
0.56
90.20
8.66
8.0
0.82
64.50
2.26
1.30
-34.40
-17.29
0.137
-34.60
0.59
74.70
7.75
9.0
0.83
50.40
1.07
1.13
-48.50
-17.03
0.141
-44.50
0.62
62.70
6.81
10.0
0.86
36.40
0.12
1.02
-63.50
-16.49
0.150
-56.20
0.65
50.90
6.72
11.0
0.88
21.60
-0.94
0.90
-79.50
-16.43
0.151
-69.40
0.68
37.40
6.46
12.0
0.90
7.30
-2.13
0.78
-95.10
-16.71
0.146
-82.10
0.71
21.40
6.04
13.0
0.91
-5.00
-3.67
0.66
-109.70
-17.27
0.137
-94.00
0.74
5.80
4.99
14.0
0.91
-15.50
-4.93
0.57
-121.40
-17.72
0.130
-102.70
0.77
-6.10
3.98
15.0
0.92
-27.50
-5.85
0.51
-133.90
-17.86
0.128
-112.40
0.80
-15.80
3.78
16.0
0.93
-40.60
-6.70
0.46
-146.60
-17.72
0.130
-123.00
0.82
-25.80
3.54
17.0
0.94
-52.30
-7.61
0.42
-160.30
-17.92
0.127
-135.30
0.82
-37.90
3.45
18.0
0.93
-61.40
-8.97
0.36
-170.90
-18.64
0.117
-144.00
0.84
-49.70
2.08
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 60 mA.
MSG/MAG
and
|S
21
|
2 (dB)
020
40
30
20
10
0
-10
10
515
MSG
MAG
|S21|2
相關(guān)PDF資料
PDF描述
ATF-33143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
ATS535SSB PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT
ATS535JSB PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-33143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF331M4 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak
ATF-331M4-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-331M4-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*