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參數(shù)資料
| 型號： | ATF-501P8-TR1G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8 |
| 文件頁數(shù)： | 22/22頁 |
| 文件大?。?/td> | 184K |
| 代理商： | ATF-501P8-TR1G |
9
Figure 41. OIP3 vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
OIP3
(dBm)
0.5
4
1
1.5
2.5
3
3.5
0.5
4
1
1.5
2
2.5
3
3.5
0.5
4
1
1.5
2
2.5
3
3.5
0.5
4
1
1.5
2
2.5
3
3.5
50
40
30
20
10
0
Figure 42. P1dB vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
P1dB
(dBm)
35
30
25
20
15
Figure 43. P1dB vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
P1dB
(dBm)
35
30
25
20
15
Figure 44. Gain vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
GAIN
(dB)
20
15
10
5
0
Figure 45. Gain vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
GAIN
(dB)
-40
°C
25
°C
85
°C
-40
°C
25
°C
85
°C
-40
°C
25
°C
85
°C
-40
°C
25
°C
85
°C
0.5
4
1
1.5
2
2.5
3
3.5
-40
°C
25
°C
85
°C
25
20
15
10
5
0
0.5
4
1
1.5
2
2.5
3
3.5
Figure 47. PAE vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
PAE
(%)
100
80
60
40
20
0
-40
°C
25
°C
85
°C
Figure 48. OIP3 vs. Ids and Vds at 2 GHz.
Ids (mA)
OIP3
(dBm)
200
640
240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
0.5
4
1
1.5
2
2.5
3
3.5
Figure 46. PAE vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
PAE
(%)
100
80
60
40
20
0
-40
°C
25
°C
85
°C
Figure 49. OIP3 vs. Ids and Vds at 900 MHz.
Ids (mA)
OIP3
(dBm)
200
640
240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
ATF-501P8 Typical Performance Curves, continued (at 25
°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 400 mA
Note:
Bias current (Ids) for the above charts are
quiescent conditions. Actual level may increase
or decrease depending on amount of RF drive.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-501P8-TR2G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-BLK | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2 | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-BLK | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-501P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-511P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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