參數(shù)資料
型號： ATF-501P8-TR1G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
文件頁數(shù)： 3/22頁
文件大?。?/td> 184K
代理商： ATF-501P8-TR1G
11
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
ATF-501P8 Typical Scattering Parameters,
VDS = 4.5V, IDS = 280 mA
Freq.
S11
S21
S12
S22
MSG/MAG K
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
factor
0.1
0.915
-132.3
31.6
37.990
112.2
-38.4
0.012
29.3
0.647
-160.6
35.0
0.173
0.2
0.911
-156.2
26.2
20.324
99.9
-37.7
0.013
24.0
0.689
-171.1
31.9
0.314
0.3
0.910
-165.4
22.8
13.783
94.5
-37.1
0.014
24.5
0.699
-175.7
29.9
0.436
0.4
0.910
-170.9
20.3
10.342
91.1
-37.1
0.014
27.3
0.702
-178.5
28.7
0.569
0.5
0.908
-173.4
18.7
8.604
88.4
-36.5
0.015
29.6
0.691
-179.9
27.6
0.648
0.6
0.907
-176.1
17.1
7.194
86.1
-35.9
0.016
32.4
0.691
178.5
26.5
0.736
0.7
0.908
-178.5
15.8
6.167
84.1
-35.4
0.017
34.4
0.694
177.2
25.6
0.800
0.8
0.905
179.8
14.7
5.407
82.1
-34.9
0.018
36.3
0.695
175.2
24.8
0.871
0.9
0.909
178.2
13.6
4.799
80.3
-34.4
0.019
38.3
0.692
175.1
24.0
0.906
1
0.909
176.6
12.7
4.308
78.3
-34.0
0.020
39.9
0.692
173.9
23.3
0.953
1.5
0.902
170.5
9.1
2.859
70.3
-31.7
0.026
45.0
0.698
169.4
18.2
1.128
2
0.902
166.0
7.1
2.264
64.4
-30.5
0.030
46.9
0.700
165.6
16.0
1.209
2.5
0.901
165.0
6.6
2.134
63.1
-30.2
0.031
47.2
0.699
163.0
15.4
1.241
3
0.901
161.1
5.0
1.772
57.7
-28.9
0.036
47.4
0.697
159.1
13.8
1.278
4
0.898
155.0
3.0
1.412
49.3
-27.3
0.043
46.5
0.707
153.7
11.7
1.326
5
0.902
145.0
0.9
1.110
37.6
-24.7
0.058
43.5
0.699
146.8
9.7
1.272
6
0.893
134.9
-0.9
0.902
22.6
-22.9
0.072
35.6
0.697
145.3
7.8
1.286
7
0.899
125.8
-3.3
0.687
9.0
-22.2
0.078
27.3
0.652
134.1
5.7
1.394
8
0.895
115.6
-4.4
0.604
-1.1
-20.8
0.091
22.0
0.646
117.4
4.2
1.463
9
0.898
105.5
-5.3
0.542
-13.0
-19.6
0.105
12.3
0.641
115.5
3.2
1.447
10
0.886
95.5
-5.9
0.505
-20.2
-18.9
0.114
9.7
0.695
104.5
2.5
1.455
11
0.868
84.7
-6.6
0.469
-29.7
-17.6
0.132
0.5
0.742
91.3
1.6
1.431
12
0.862
74.0
-8.0
0.398
-40.8
-17.4
0.135
-6.3
0.735
88.1
-0.1
1.661
13
0.847
64.5
-7.9
0.403
-47.5
-16.0
0.159
-12.3
0.766
78.4
-0.1
1.491
14
0.844
55.6
-8.5
0.377
-58.4
-15.3
0.171
-21.3
0.800
68.9
-0.3
1.397
15
0.837
47.4
-9.0
0.354
-67.2
-14.6
0.187
-30.1
0.797
65.6
-1.1
1.414
16
0.824
39.9
-9.7
0.327
-72.0
-14.2
0.194
-36.8
0.763
51.5
-2.3
1.608
17
0.821
31.6
-9.8
0.323
-82.7
-13.4
0.215
-44.6
0.786
38.9
-2.4
1.488
18
0.805
24.6
-10.5
0.298
-90.1
-12.5
0.237
-51.8
0.781
29.5
-3.5
1.575
Figure 56. MSG/MAG & |S21|
2 vs. Frequency
at 4.5V 280mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2 (dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
S21
MSG
MAG
相關PDF資料
PDF描述
ATF-501P8-TR2G S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2 S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-BLK S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關代理商/技術參數(shù)
參數(shù)描述
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ATF-511P8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC
ATF-511P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-511P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-511P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
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