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參數(shù)資料
| 型號： | ATF-551M4-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 19/23頁 |
| 文件大?。?/td> | 406K |
| 代理商： | ATF-551M4-BLK |
5
ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match
with reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match
based on production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at
the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from
actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
Figure 11. Gain vs. Ids and Vds at 2 GHz[1].
Ids (mA)
G
A
IN
(d
B
)
0
35
15
5
30
25
20
10
20
19
18
17
16
15
2V
2.7V
3V
Figure 12. Fmin vs. Ids and Vds at 2 GHz[2].
Ids (mA)
Fm
in
(d
B
)
0
15
5
30
25
20
10
0.6
0.5
0.4
0.3
0.2
0.1
0
2V
2.7V
3V
Figure 13. OIP3 vs. Ids and Vds at 2 GHz[1].
Ids (mA)
O
IP
3
(d
B
m
)
0
35
15
5
30
25
20
10
36
32
28
24
20
16
2V
2.7V
3V
Figure 14. IIP3 vs. Ids and Vds at 2 GHz[1].
Ids (mA)
II
P3
(d
B
m
)
0
35
15
5
30
25
20
10
18
16
14
12
10
8
6
4
2
0
2V
2.7V
3V
Figure 15. P1dB vs. Ids and Vds at 2 GHz[1].
Ids (mA)
P1
dB
(d
B
m
)
0
35
15
5
30
25
20
10
2V
2.7V
3V
17
16
15
14
13
12
11
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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