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參數(shù)資料
| 型號(hào)： | ATF-551M4-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 21/23頁 |
| 文件大?。?/td> | 406K |
| 代理商： | ATF-551M4-BLK |
ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise fig-
ure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based
on production test board requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned
for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measure-
ments.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
GAIN
(dB)
0
6
3
1
5
4
2
30
25
20
15
10
5
-40
°C
25
°C
85
°C
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[2].
FREQUENCY (GHz)
Fmin
(dB)
0
6
3
1
5
4
2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-40
°C
25
°C
85
°C
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
OIP3
(dBm)
0
6
3
1
5
4
2
-40
°C
25
°C
85
°C
25
24
23
22
21
20
19
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
IIP3
(dBm)
0
6
3
1
5
4
2
-40
°C
25
°C
85
°C
20
15
10
5
0
-5
-10
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
FREQUENCY (GHz)
P1dB
(dBm)
0
6
3
1
5
4
2
-40
°C
25
°C
85
°C
16
15
14
13
12
11
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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