參數(shù)資料
型號(hào)： ATF16V8B-10PC
廠商： Atmel
文件頁(yè)數(shù)： 16/26頁(yè)
文件大?。?/td> 0K
描述： IC PLD 8CELL 10NS 20DIP
標(biāo)準(zhǔn)包裝： 18
系列： 16V8
可編程類型： EE PLD
宏單元數(shù)： 8
輸入電壓： 5V
速度： 10ns
安裝類型： 通孔
封裝/外殼： 20-DIP（0.300"，7.62mm）
供應(yīng)商設(shè)備封裝： 20-PDIP
包裝： 管件
產(chǎn)品目錄頁(yè)面： 610 (CN2011-ZH PDF)
23
7707F–AVR–11/10
AT90USB82/162
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Note:
5.3.5
Preventing EEPROM Corruption
During periods of low V
CC, the EEPROM data can be corrupted because the supply voltage is
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
CC reset Protection circuit can
Assembly Code Example
EEPROM_read:
; Wait for completion of previous write
sbic
EECR,EEPE
rjmp
EEPROM_read
; Set up address (r18:r17) in address register
out
EEARH, r18
out
EEARL, r17
; Start eeprom read by writing EERE
sbi
EECR,EERE
; Read data from Data Register
in
r16,EEDR
ret
C Code Example
unsigned char
EEPROM_read(unsigned int uiAddress)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
;
/* Set up address register */
EEAR = uiAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from Data Register */
return EEDR;
}
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF16V8B-10PI 功能描述:EEPLD - 電子擦除可編程邏輯設(shè)備 10NS 250 GTE EPLD 5V GRN 10NS IND TEMP RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數(shù)量:20 電源電流:20 mA 延遲時(shí)間:15 ns 每個(gè)宏指令的積項(xiàng)數(shù):8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池?cái)?shù)量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-20
ATF16V8B-10SC 功能描述:EEPLD - 電子擦除可編程邏輯設(shè)備 10NS250 GATES 20 PIN5V - 10NS RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數(shù)量:20 電源電流:20 mA 延遲時(shí)間:15 ns 每個(gè)宏指令的積項(xiàng)數(shù):8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池?cái)?shù)量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-20
ATF16V8B-10SI 功能描述:EEPLD - 電子擦除可編程邏輯設(shè)備 10NS 250 GATES EPLD 10NS IND TEMP RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數(shù)量:20 電源電流:20 mA 延遲時(shí)間:15 ns 每個(gè)宏指令的積項(xiàng)數(shù):8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池?cái)?shù)量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-20
ATF16V8B-10XC 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Highperformance EE PLD
ATF16V8B-10XI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD
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