參數(shù)資料
型號: ATTINY2313-20MU
廠商: Atmel
文件頁數(shù): 90/225頁
文件大小: 0K
描述: IC MCU AVR 2K FLASH 20-QFN
產(chǎn)品培訓模塊: MCU Product Line Introduction
tinyAVR Introduction
標準包裝: 490
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 20MHz
連通性: SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復位,POR,PWM,WDT
輸入/輸出數(shù): 18
程序存儲器容量: 2KB(1K x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 128 x 8
RAM 容量: 128 x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 20-WFQFN 裸露焊盤
包裝: 托盤
產(chǎn)品目錄頁面: 612 (CN2011-ZH PDF)
配用: ATSTK600-DIP40-ND - STK600 SOCKET/ADAPTER 40-PDIP
ATAVRDRAGON-ND - KIT DRAGON FLASH MEM AVR
ATAVRISP2-ND - PROGRAMMER AVR IN SYSTEM
ATJTAGICE2-ND - AVR ON-CHIP D-BUG SYSTEM
其它名稱: Q2312268A
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁當前第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁第161頁第162頁第163頁第164頁第165頁第166頁第167頁第168頁第169頁第170頁第171頁第172頁第173頁第174頁第175頁第176頁第177頁第178頁第179頁第180頁第181頁第182頁第183頁第184頁第185頁第186頁第187頁第188頁第189頁第190頁第191頁第192頁第193頁第194頁第195頁第196頁第197頁第198頁第199頁第200頁第201頁第202頁第203頁第204頁第205頁第206頁第207頁第208頁第209頁第210頁第211頁第212頁第213頁第214頁第215頁第216頁第217頁第218頁第219頁第220頁第221頁第222頁第223頁第224頁第225頁
18
2543L–AVR–08/10
ATtiny2313
Bit 2 – EEMPE: EEPROM Master Program Enable
The EEMPE bit determines whether writing EEPE to one will have effect or not.
When EEMPE is set, setting EEPE within four clock cycles will program the EEPROM at the
selected address. If EEMPE is zero, setting EEPE will have no effect. When EEMPE has been
written to one by software, hardware clears the bit to zero after four clock cycles.
Bit 1 – EEPE: EEPROM Program Enable
The EEPROM Program Enable Signal EEPE is the programming enable signal to the EEPROM.
When EEPE is written, the EEPROM will be programmed according to the EEPMn bits setting.
The EEMPE bit must be written to one before a logical one is written to EEPE, otherwise no
EEPROM write takes place. When the write access time has elapsed, the EEPE bit is cleared by
hardware. When EEPE has been set, the CPU is halted for two cycles before the next instruction
is executed.
Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal – EERE – is the read strobe to the EEPROM. When the cor-
rect address is set up in the EEAR Register, the EERE bit must be written to one to trigger the
EEPROM read. The EEPROM read access takes one instruction, and the requested data is
available immediately. When the EEPROM is read, the CPU is halted for four cycles before the
next instruction is executed. The user should poll the EEPE bit before starting the read opera-
tion. If a write operation is in progress, it is neither possible to read the EEPROM, nor to change
the EEAR Register.
Atomic Byte
Programming
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into the EEAR Register and data into EEDR Register. If the EEPMn
bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the erase/write
operation. Both the erase and write cycle are done in one operation and the total programming
time is given in Table 1. The EEPE bit remains set until the erase and write operations are com-
pleted. While the device is busy with programming, it is not possible to do any other EEPROM
operations.
Split Byte
Programming
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-consuming
operations (typically after Power-up).
Erase
To erase a byte, the address must be written to EEAR. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in Table 1). The EEPE bit remains set until the erase operation completes.
While the device is busy programming, it is not possible to do any other EEPROM operations.
Write
To write a location, the user must write the address into EEAR and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in Table 1). The EEPE bit remains set until
the write operation completes. If the location to be written has not been erased before write, the
data that is stored must be considered as lost. While the device is busy with programming, it is
not possible to do any other EEPROM operations.
The calibrated Oscillator is used to time the EEPROM accesses. Make sure the Oscillator fre-
quency is within the requirements described in “Oscillator Calibration Register – OSCCAL” on
相關(guān)PDF資料
PDF描述
AT89LP4052-20XU IC 8051 MCU FLASH 4K 20TSSOP
AT89LP4052-20PU IC 8051 MCU FLASH 4K 20DIP
ATMEGA168V-10MQR MCU AVR 16KB FLASH 10MHZ 32QFN
ATTINY2313-20SU IC MCU AVR 2K FLASH 20SOIC
70295-002 GUIDE PIN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATTINY2313-20MUR 功能描述:8位微控制器 -MCU AVR 2KB FLSH 128B EE 128B SRAM 1UART 20P RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
ATTINY231320PI 制造商:Atmel Corporation 功能描述:
ATtiny2313-20PI 功能描述:8位微控制器 -MCU AVR 2K FLSH 128B EE 128B SRAM 1 UART RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
ATTINY2313-20PJ 功能描述:IC MCU AVR 2K FLASH 20DIP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:AVR® ATtiny 標準包裝:9 系列:87C 核心處理器:8051 芯體尺寸:8-位 速度:40/20MHz 連通性:UART/USART 外圍設(shè)備:POR,WDT 輸入/輸出數(shù):32 程序存儲器容量:32KB(32K x 8) 程序存儲器類型:OTP EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:0°C ~ 70°C 封裝/外殼:40-DIP(0.600",15.24mm) 包裝:管件
ATtiny2313-20PU 功能描述:8位微控制器 -MCU 2kB Flash 0.128kB EEPROM 18 I/O Pins RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT