參數(shù)資料
型號: AUIRF1324WL
元件分類: JFETs
英文描述: 240 A, 24 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PIN
文件頁數(shù): 10/11頁
文件大?。?/td> 238K
代理商: AUIRF1324WL
AUIRF1324WL
8
www.irf.com
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Fig 21.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Inductor Current
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
VDD
VDS
LD
D.U.T
+
-
Second Pulse Width < 1μs
Duty Factor < 0.1%
tp
V(BR)DSS
IAS
1K
VCC
DUT
0
L
S
20K
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
VDS
VGS
90%
10%
td(off)
td(on)
tf
tr
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