參數(shù)資料
型號: AUIRF1324WL
元件分類: JFETs
英文描述: 240 A, 24 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PIN
文件頁數(shù): 7/11頁
文件大?。?/td> 238K
代理商: AUIRF1324WL
AUIRF1324WL
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
10000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
100
200
300
400
I D
,
D
ra
in
C
ur
re
nt
(A
)
Limited By Package
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
24
25
26
27
28
29
30
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
Id = 5mA
-5
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
E
ne
rg
y
J)
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
500
1000
1500
2000
2500
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
99A
100A
BOTTOM 195A
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
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