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參數(shù)資料
| 型號(hào)： | AUIRF4905 |
| 元件分類： | JFETs |
| 英文描述： | 74 A, 55 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 272K |
| 代理商： | AUIRF4905 |
AUIRF4905
HEXFET Power MOSFET
AUTOMOTIVE GRADE
www.irf.com
1
11/10/10
Features
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Advanced Planar Technology
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Low On-Resistance
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Dynamic dV/dT Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Repetitive Avalanche Allowed up to Tjmax
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Lead-Free, RoHS Compliant
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Automotive Qualified *
Specifically designed for Automotive applications, this cellular
design of HEXFET Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide
variety of other applications.
Description
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
- 55V
RDS(on) max.
0.02
ID
-74A
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy(Thermally limited)
d
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
i
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
-5.0
-55 to + 175
300
10 lbf
yin (1.1Nym)
Max.
-74
-52
-260
mJ
°C
A
20
930
-38
200
1.3
± 20
TO-220AB
AUIRF4905
D
S
D
G
S
D
G
PD - 96338
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| AUIRF4905L | 功能描述:MOSFET Auto Q101 -55V P-Ch HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| AUIRF4905STRR | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET P CHANNEL -55V, 20MOHM, 75A, 120NC, D2PAK - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET P CH 55V 42A D2PAK 制造商:International Rectifier 功能描述:Automotive MOSFET P 75A 120nC D2Pak |
| AUIRF5210S | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET P CHANNEL -100V, 60MOHM, 38A, 150NC, D2PA - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET P CH 100V 38A D2PAK 制造商:International Rectifier 功能描述:Automotive MOSFET P 38A 150nC D2Pak |
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