參數(shù)資料
型號(hào)： AUIRF7647S2TR
元件分類： JFETs
英文描述： 5.9 A, 100 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
文件頁數(shù)： 4/11頁
文件大?。?/td> 218K
代理商： AUIRF7647S2TR
AUIRF7647S2TR/TR1
2
www.irf.com
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 11
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.10
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
26
31
m
Ω
VGS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-13
–––
mV/°C
gfs
Forward Transconductance
16
–––
S
RG(int)
Internal Gate Resistance
–––
1.6
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
5.0
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Qg
Total Gate Charge
–––
14
21
VDS = 50V
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.3
–––
VGS = 10V
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.3
–––
ID = 14A
Qgd
Gate-to-Drain Charge
–––
5.3
–––
See Fig. 11
Qgodr
Gate Charge Overdrive
–––
4.1
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
6.6
–––
Qoss
Output Charge
–––
7.6
–––
nC
td(on)
Turn-On Delay Time
–––
5.5
–––
tr
Rise Time
–––
8.4
–––
td(off)
Turn-Off Delay Time
–––
7.9
–––
ns
tf
Fall Time
–––
4.6
–––
Ciss
Input Capacitance
–––
910
–––
Coss
Output Capacitance
–––
190
–––
Crss
Reverse Transfer Capacitance
–––
47
–––
pF
Coss
Output Capacitance
–––
960
–––
Coss
Output Capacitance
–––
115
–––
Coss eff.
Effective Output Capacitance
–––
190
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
37
–––
ns
Qrr
Reverse Recovery Charge
–––
55
–––
nC
RG = 6.8Ω
VGS = -20V
VDS = VGS, ID = 50μA
VDS = 16V, VGS = 0V
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VDS = 25V, ID = 14A
VDD = 50V
ID = 14A
nC
TJ = 25°C, IS = 14A, VGS = 0V i
TJ = 25°C, IF = 14A, VDD = 25V
di/dt = 100A/μs
i
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 10V i
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A i
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 0V, VDS = 0V to 80V
VGS = 20V
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 80V, = 1.0MHz
–––
24
95
–––
相關(guān)PDF資料
PDF描述
AUIRF7648M2TR 14 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7648M2TR1 14 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7665S2TR1 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7665S2TR 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF7647S2TR1 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7648M2TR 功能描述:MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7648M2TR1 功能描述:MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7665S2TR 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7665S2TR1 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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