參數(shù)資料
型號: AUIRF7647S2TR
元件分類: JFETs
英文描述: 5.9 A, 100 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
文件頁數(shù): 7/11頁
文件大?。?/td> 218K
代理商: AUIRF7647S2TR
AUIRF7647S2TR/TR1
www.irf.com
5
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
G
S
(t
h)
,G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 50μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VGS = 0V
0
5
10
15
20
25
30
ID,Drain-to-Source Current (A)
0
10
20
30
40
G
fs
,F
or
w
ar
d
T
ra
ns
co
nd
uc
ta
nc
e
(S
)
TJ = 25°C
TJ = 175°C
VDS = 5.0V
380μs PULSE WIDTH
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
02468
10 12 14 16 18 20
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 14A
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
5
10
15
20
25
I D
,
D
ra
in
C
ur
re
nt
(A
)
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AUIRF7665S2TR1 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube