參數(shù)資料
型號(hào)： AUIRF7737L2TR1
元件分類： JFETs
英文描述： 31 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 292K
代理商： AUIRF7737L2TR1
2
www.irf.com
AUIRF7737L2TR/TR1
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 10
D
S
G
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.5
1.9
m
VGS(th)
Gate Threshold Voltage
2.0
3.0
4.0
V
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-10
–––
mV/°C
gfs
Forward Transconductance
100
–––
S
RG
Gate Resistance
–––
0.6
–––
IDSS
Drain-to-Source Leakage Current
–––
5
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
Qg
Total Gate Charge
–––
89
134
Qgs1
Pre-Vth Gate-to-Source Charge
–––
18
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
8
–––
See Fig.11
Qgd
Gate-to-Drain ("Miller") Charge
–––
34
–––
Qgodr
Gate Charge Overdrive
–––
29
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
42
–––
Qoss
Output Charge
–––
39
–––
nC
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
22
–––
tf
Fall Time
–––
14
–––
Ciss
Input Capacitance
–––
5469
–––
Coss
Output Capacitance
–––
1193
–––
Crss
Reverse Transfer Capacitance
–––
534
–––
Coss
Output Capacitance
–––
4296
–––
Coss
Output Capacitance
–––
1066
–––
Coss eff.
Effective Output Capacitance
–––
1615
–––
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
35
53
ns
Qrr
Reverse Recovery Charge
–––
32
48
nC
IF = 94A, VDD = 20V
di/dt = 100A/s
i
IS = 94A, VGS = 0V i
ID = 94A
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10V
i
ID = 94A
RG = 1.8
= 1.0MHz
VGS = 0V, VDS = 0V to 32V
Conditions
nA
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 94A i
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = -20V
p-n junction diode.
MOSFET symbol
Conditions
VGS = 0V
VDS = 25V
showing the
integral reverse
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
–––
156
624
pF
VDS = VGS, ID = 150A
–––
A
nC
ns
VDS = 10V, ID = 94A
VDS = 20V, VGS = 10V
VGS = 20V
VDS = 40V, VGS = 0V
相關(guān)PDF資料
PDF描述
AUIRF7738L2TR 35 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF7738L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7738L2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7739L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7739L2TR_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:Automotive DirectFET Power MOSFET
AUIRF7739L2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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